Detection and precise localization of nano-scale structures buried beneathspin coated films are highly valuable additions to nano-fabrication technology.In principle, the topography of the final film contains information about thelocation of the buried features. However, it is generally believed that therelation is masked by flow effects, which lead to an upstream shift of the dryfilm's topography and render precise localization impossible. Here wedemonstrate, theoretically and experimentally, that the flow-shift paradigmdoes not apply at the sub-micron scale. Specifically, we show that the resisttopography is accurately obtained from a convolution operation with a symmetricGaussian Kernel whose parameters solely depend on the resist characteristics.We exploit this finding for a 3 nm precise overlay fabrication of metalcontacts to an InAs nanowire with a diameter of 27 nm using thermal scanningprobe lithography.
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